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60 V, N-channel Trench MOSFET
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Vgs (Max) | Qualification | Package Name | Vgs(th) (Max) | Technology | Current - Continuous Drain (Id) (Ta) | Mounting Type | Gate Charge (Max) | Grade | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | 20 V | AEC-Q101 | TO-236AB | 2.7 V | MOSFET (Metal Oxide) | 3.1 A | Surface Mount | 19 nC | Automotive | 60 mOhm | -55 °C | 150 °C | 10 V | 4.5 V | N-Channel | 8.36 W 478 mW | 60 V | 646 pF |