Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 6.2 A 8.6 A | 1.2 W | Surface Mount | 1810 pF | 15 mOhm | 8-SO | N and P-Channel | Logic Level Gate | 40 V | 3 V | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 40 nC |