Catalog
IGBT 650V 30A TO-3PFP
Description
AI
The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.
Beta
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IGBT 650V 30A TO-3PFP
IGBT 650V 30A TO-3PFP
| Part | Vce(on) (Max) | Gate Charge | Current - Collector (Ic) (Max) | IGBT Type | Power - Max | Package / Case | Voltage - Collector Emitter Breakdown (Max) | Package Name | Td (on) @ 25°C | Td (off) @ 25°C | Mounting Type | Test Condition Current | Test Condition Voltage | Test Condition Voltage (Secondary) | Test Condition Resistance | Input Type | Switching Energy (On) | Switching Energy (Off) | Operating Temperature | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 1.68 V | 72 nC | 60 A | Trench | 63.5 W | SC-94 | 650 V | TO-3PFP | 35 ns | 120 ns | Through Hole | 30 A | 400 V | 15 V | 10 Ohm | Standard | 330 µJ | 760 µJ | 175 °C | |
 Renesas Electronics Corporation | 1.68 V | 72 nC | 60 A | Trench | 63.5 W | SC-93-3 TO-3PFM | 650 V | TO-3PF | 35 ns | 120 ns | Through Hole | 30 A | 400 V | 15 V | 10 Ohm | Standard | 330 µJ | 760 µJ | 175 °C | 225 A |