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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Package Name | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Package / Case | Technology | Vgs(th) (Max) | FET Type | Vgs (Max) | Rds On (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 30 V | 1.7 W 32 W | 10 V | 4.5 V | 1400 pF | MLPAK33 | 8.9 A | 38.8 A | -55 °C | 150 °C | 43.4 nC | 8-PowerVDFN | MOSFET (Metal Oxide) | 2 V | P-Channel | 25 V | 12.8 mOhm | Surface Mount |