IXFN50N80Q2 Series

DiscMSFT NCh HiPerFET-QCls SOT-227B/mini

Catalog

DiscMSFT NCh HiPerFET-QCls SOT-227B/mini

Part	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Package / Case	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package Name	FET Type
LITTELFUSE IXFN50N80Q2	160 mOhm	-55 °C	150 °C	50 A	800 V	13500 pF	1135 W	Chassis Mount	5.5 V	260 nC	miniBLOC SOT-227-4	30 V	MOSFET (Metal Oxide)	10 V	SOT-227B	N-Channel

Catalog

DiscMSFT NCh HiPerFET-QCls SOT-227B/mini

Description

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Advantages: Easy to mount High power density Space savings