IRF640 Series

Manufacturer: INFINEON

Catalog

POWER MOSFET, HEXFET, N CHANNEL, 200 V, 18 A, 0.15 OHM, TO-220AB, THROUGH HOLE

Part	Current - Continuous Drain (Id) (Tc)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Gate Charge (Max)	Vgs (Max)	Technology	FET Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
INFINEON IRF640NPBF	18 A	Through Hole	10 V	TO-220AB	-55 °C	175 °C	4 V	1160 pF	150 mOhm	67 nC	20 V	MOSFET (Metal Oxide)	N-Channel	TO-220-3	150 W	200 V
INFINEON 64-0007	18 A	Through Hole	10 V	TO-220AB	-55 °C	175 °C	4 V	1160 pF	150 mOhm	67 nC	20 V	MOSFET (Metal Oxide)	N-Channel	TO-220-3	150 W	200 V
INFINEON IRF640NSTRRPBF	18 A	Surface Mount	10 V	D2PAK	-55 °C	175 °C	4 V	1160 pF	150 mOhm	67 nC	20 V	MOSFET (Metal Oxide)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 W	200 V
INFINEON IRF640NLPBF	18 A	Through Hole	10 V	TO-262	-55 °C	175 °C	4 V	1160 pF	150 mOhm	67 nC	20 V	MOSFET (Metal Oxide)	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	150 W	200 V