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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Vgs(th) (Max) | Rds On (Max) | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | 1.05 V | 490 mOhm | SC-101 SOT-883 | 8 V | 30 V | 900 mA | Surface Mount | -55 °C | 150 °C | 4.5 V | 1.8 V | SOT-883 | 2.7 W 360 mW | 78 pF | 1.16 nC | N-Channel |