IXYX140 Series

Disc IGBT XPT-GenX3 TO-247AD

Catalog

Disc IGBT XPT-GenX3 TO-247AD

Part	Package / Case	Current - Collector (Ic) (Max)	Switching Energy (On)	Switching Energy (Off)	Power - Max	Vce(on) (Max)	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Resistance	Test Condition Current	Voltage - Collector Emitter Breakdown (Max)	Td (on) @ 25°C	Td (off) @ 25°C	Gate Charge	Package Name	Current - Collector Pulsed (Icm)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Type	IGBT Type	Reverse Recovery Time (trr)
LITTELFUSE IXYX140N90C3	TO-247-3 Variant	310 A	4.3 mJ	4 mJ	1630 W	2.7 V	450 V	15 V	1 Ohm	100 A	900 V	40 ns	145 ns	330 nC	PLUS247™-3	840 A	-55 °C	175 °C	Through Hole	Standard
LITTELFUSE IXYX140N120A4	TO-247-3 Variant	480 A	4.9 mJ	12 mJ	1.5 kW	1.7 V	600 V	15 V	1.5 Ohm	70 A	1200 V	52 ns	590 ns	420 nC	PLUS247™-3	1200 A	-55 °C	175 °C	Through Hole	Standard	PT	47 ns

Catalog

Disc IGBT XPT-GenX3 TO-247AD

Description

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package