Catalog
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Description
AI
NPN/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
| Part | DC Current Gain (hFE) (Min) | Frequency - Transition (Options) | PNP Count | Transistor Type | NPN Count | Operating Temperature | Package / Case | Current - Collector Cutoff (Max) | Vce Saturation (Max) | Power - Max | Qualification | Current - Collector (Ic) (Max) | Package Length | Package Name | Package Width | Mounting Type | Voltage - Collector Emitter Breakdown (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 190 240 | 100MHz 120MHz | 1 | NPN PNP | 1 | 150 °C | 6-UFDFN Exposed Pad | 100 nA | 260 mV 480 mV | 510 mW | AEC-Q101 | 1 A | 2 mm | 6-HUSON | 2 mm | Surface Mount | 120 V | Automotive |