IPB77N Series

Catalog

MOSFET N-CH 55V 77A TO263-3

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB77N06S3-09	8.8 mOhm	55 V	77 A	N-Channel	5335 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	-55 °C	175 ░C	Surface Mount	20 V	PG-TO263-3-2	4 V	107 W	MOSFET (Metal Oxide)	103 nC
Infineon Technologies IPB77N06S212ATMA1	11.7 mOhm	55 V	77 A	N-Channel	1770 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	-55 °C	175 ░C	Surface Mount	20 V	PG-TO263-3-2		158 W	MOSFET (Metal Oxide)		4 V	60 nC