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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package Name | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Mounting Type | Rds On (Max) | Technology | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | DFN0606-3 | 15 pF 15 pF | 10 V | 2.5 V | 1.5 V | Surface Mount | 4.2 Ohm | MOSFET (Metal Oxide) | 0.6 nC | -55 °C | 150 °C | 60 V | N-Channel | 2.3 W 360 mW | 3-XFDFN | 20 V | 260 mA |