IR2102 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	High Side Voltage - Max (Bootstrap)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Logic Voltage - VIL	Logic Voltage - VIH	Channel Type	Package Length	Package Width	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	Driven Configuration	Input Type	Rise Time (Typ)	Fall Time (Typ)
INFINEON IR2102PBF	IGBT MOSFET N-Channel MOSFET	600 V	8-DIP 8-PDIP	-40 °C	150 °C	0.8 V	3 V	Independent	0.3 in	7.62 mm	10 VDC	20 V	Through Hole	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns
INFINEON IR2102PBF	IGBT MOSFET N-Channel MOSFET	600 V	8-DIP 8-PDIP	-40 °C	150 °C	0.8 V	3 V	Independent	0.3 in	7.62 mm	10 VDC	20 V	Through Hole	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns
INFINEON IR2102STR	IGBT MOSFET N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V	3 V	Independent	0.154 in	3.9 mm	10 VDC	20 V	Surface Mount	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns
INFINEON IR2102S	IGBT MOSFET N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V	3 V	Independent	0.154 in	3.9 mm	10 VDC	20 V	Surface Mount	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns
INFINEON IR2102STRPBF	IGBT MOSFET N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V	3 V	Independent	0.154 in	3.9 mm	10 VDC	20 V	Surface Mount	2	360 mA	210 mA	N-Channel	Half-Bridge		100 ns	50 ns
INFINEON IR2102	IGBT MOSFET N-Channel MOSFET	600 V	8-DIP 8-PDIP	-40 °C	150 °C	0.8 V	3 V	Independent	0.3 in	7.62 mm	10 VDC	20 V	Through Hole	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns
INFINEON IR2102STRPBF
INFINEON IR2102SPBF	IGBT MOSFET N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V	3 V	Independent	0.154 in	3.9 mm	10 VDC	20 V	Surface Mount	2	360 mA	210 mA	N-Channel	Half-Bridge	Inverting	100 ns	50 ns