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OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 12.5 MOHM;
| Part | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 83 W | -55 °C | 175 ░C | 100 V | Surface Mount | MOSFET (Metal Oxide) | 4.5 V 10 V | 14.6 nC | N-Channel | PG-TDSON-8-6 | 9.6 mOhm | 2.3 V | 20 V | 8-PowerTDFN | 2100 pF |