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20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Power Dissipation (Max) | Mounting Type | FET Type | Vgs(th) (Max) | Rds On (Max) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 41 pF | 8 V | 4.5 V | 1.5 V | DFN0606-3 | 2.23 W 360 mW | Surface Mount | N-Channel | 950 mV | 0.31 Ohm | 0.95 nC | -55 °C | 150 °C | 1.2 A | MOSFET (Metal Oxide) | 3-XFDFN | 20 V |