Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247
| Part | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 36 mOhm | N-Channel | TO-247-3 | 172 W | -55 °C | 175 ░C | SiC (Silicon Carbide Junction Transistor) | 5.6 V | 46 A | 15 V | 20 V | PG-TO247-3-40 | 28 nC | -7 V 23 V | 997 pF | 650 V | Through Hole |