IMZ120 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 26 A, 1.2 KV, 0.09 OHM, TO-247
| Part | Gate Charge (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Package / Case | Vgs(th) (Max) | Package Name | Technology | FET Type | Mounting Type | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 21 nC | 23 V | -7 V | 1200 V | 18 V | 15 V | 115 W | -55 °C | 175 °C | 707 pF | 26 A | TO-247-4 | 5.7 V | PG-TO247-4-1 | SiCFET (Silicon Carbide) | N-Channel | Through Hole | 117 mOhm |
 INFINEON | 31 nC | 23 V | -7 V | 1200 V | 18 V | 15 V | 150 W | -55 °C | 175 °C | 1060 pF | 36 A | TO-247-4 | 5.7 V | PG-TO247-4-1 | SiCFET (Silicon Carbide) | N-Channel | Through Hole | 78 mOhm |