MOSFET N-CH 200V 90A TO263
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Power Dissipation (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM90142E-GE3 | 15 mOhm | -55 °C | 175 ░C | Surface Mount | 90 A | TO-263 (D2PAK) | N-Channel | 375 W | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 4 V | 87 nC | 200 V | MOSFET (Metal Oxide) | 3120 pF | 10 V | 7.5 V | 20 V |