DMG6302UDW Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMG6302UDW-13	310 mW	2 P-Channel	30.7 pF	10 Ohm	6-TSSOP SC-88 SOT-363	Surface Mount	-55 °C	150 °C	25 V	SOT-363	MOSFET (Metal Oxide)	0.34 nC	1.5 V	150 mA

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.