SST39LF020 Series

2Mb 3-3.6V Parallel Flash

Catalog

2Mb 3-3.6V Parallel Flash

Part	Memory Organization [custom]	Memory Organization [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Size	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Memory Type	Technology	Access Time	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Supplier Device Package	Memory Format	Package / Case [y]	Package / Case [y]	Supplier Device Package [x]	Supplier Device Package [y]
Microchip Technology SST39LF020-45-4C-MME	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	34-WFBGA	Non-Volatile	FLASH	45 ns	20 µs	20 µs	34-WFBGA (6x4)	FLASH
Microchip Technology SST39LF020-45-4C-WHE	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-TFSOP	Non-Volatile	FLASH	45 ns	20 µs	20 µs	32-TSOP	FLASH	0.488 in	12.4 mm
Microchip Technology SST39LF020-55-4I-WHE	256 K	8	85 °C	-40 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-TFSOP	Non-Volatile	FLASH	55 ns	20 µs	20 µs	32-TSOP	FLASH	0.488 in	12.4 mm
Microchip Technology SST39LF020-55-4C-NHE-T	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-LCC (J-Lead)	Non-Volatile	FLASH - NOR	55 ns	20 µs	20 µs	32-PLCC	FLASH			11.43	13.97
Microchip Technology SST39LF020-55-4C-WHE-T	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-TFSOP	Non-Volatile	FLASH - NOR	55 ns	20 µs	20 µs	32-TSOP	FLASH	0.488 in	12.4 mm
Microchip Technology SST39LF020-55-4C-NHE	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-LCC (J-Lead)	Non-Volatile	FLASH	55 ns	20 µs	20 µs	32-PLCC	FLASH			11.43	13.97
Microchip Technology SST39LF020-45-4C-B3KE-T	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	48-TFBGA	Non-Volatile	FLASH	45 ns	20 µs	20 µs	48-TFBGA	FLASH
Microchip Technology SST39LF020-45-4C-B3KE	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	48-TFBGA	Non-Volatile	FLASH	45 ns	20 µs	20 µs	48-TFBGA	FLASH
Microchip Technology SST39LF020-45-4C-NHE	256 K	8	70 °C	0 °C	Surface Mount	2 Gbit	Parallel	3.6 V	3 V	32-LCC (J-Lead)	Non-Volatile	FLASH	45 ns	20 µs	20 µs	32-PLCC	FLASH			11.43	13.97

Catalog

2Mb 3-3.6V Parallel Flash

Key Features

• + Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• + Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040

• + Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• + Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

• + Sector-Erase Capability– Uniform 4 KByte sectors

• + Fast Read Access Time:– 55 ns for SST39LF020/040– 70 ns for SST39VF512/010/020/040

• + Latched Address and Data

• + Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040

• + Automatic Write Timing– Internal VPP Generation

• + End-of-Write Detection– Toggle Bit– Data# Polling

• + CMOS I/O Compatibility

• + JEDEC Standard– Flash EEPROM Pinouts and command sets

• + Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• + All devices are RoHS compliant

Description

The SST39LF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF020 device writes (Program or Erase) with a 3.0-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.