TRANS 2NPN PREBIAS 0.2W US6
| Part | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Resistor - Emitter Base (R2) | Resistor - Base (R1) | Transistor Type | Package / Case | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 mA | 80 | Surface Mount | 500 nA | 250 MHz | US6 | 50 V | 200 mW | 47000 Ohms | 2.2 kOhm | 2 NPN - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 300 mV |
Toshiba Semiconductor and Storage | 100 mA | 80 | Surface Mount | 500 nA | 250 MHz | US6 | 50 V | 200 mW | 47000 Ohms | 2.2 kOhm | 2 NPN - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 300 mV |
Toshiba Semiconductor and Storage | 100 mA | 80 | Surface Mount | 500 nA | 250 MHz | US6 | 50 V | 200 mW | 47000 Ohms | 2.2 kOhm | 2 NPN - Pre-Biased (Dual) | 6-TSSOP SC-88 SOT-363 | 300 mV |