TC4451 Series

12 A MOSFET Gate Driver

Catalog

12 A MOSFET Gate Driver

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Driven Configuration	Input Type	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Package / Case [y]	Package / Case [x]
Microchip Technology TC4451VPA
Microchip Technology TC4451VMF713	13 A	13 A	1	Surface Mount	150 °C	-40 °C	8-VDFN Exposed Pad	Low-Side	Inverting	Single	32 ns	30 ns	18 V	4.5 V	8-DFN-S (6x5)
Microchip Technology TC4451VAT
Microchip Technology TC4451VOA713	13 A	13 A	1	Surface Mount	150 °C	-40 °C	8-SOIC	Low-Side	Inverting	Single	32 ns	30 ns	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in
Microchip Technology TC4451VOA
Microchip Technology TC4451VOA	13 A	13 A	1	Surface Mount	150 °C	-40 °C	8-SOIC	Low-Side	Inverting	Single	32 ns	30 ns	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in
Microchip Technology TC4451VMF
Microchip Technology TC4451VMF	13 A	13 A	1	Surface Mount	150 °C	-40 °C	8-VDFN Exposed Pad	Low-Side	Inverting	Single	32 ns	30 ns	18 V	4.5 V	8-DFN-S (6x5)
Microchip Technology TC4451VAT	13 A	13 A	1	Through Hole	150 °C	-40 °C	TO-220-5	Low-Side	Inverting	Single	32 ns	30 ns	18 V	4.5 V	TO-220-5
Microchip Technology TC4451VOA713

Catalog

12 A MOSFET Gate Driver

Key Features

- Low Shoot-Through/Cross-Conduction in Output Stage

- High Peak Output Current: 13 A (Typical)

- High Continuous Output Current: 2.6 A (max)

- Wide Input Voltage Supply Range: 4.5 V to 18 V.

- 21 ns with 10,000 pF load

- 42 ns with 22,000 pF Load

- Latch-up Protection to Withstand 1.5 A Output Reverse Current

- Pin-Compatible with the TC4421/22, TC4421A/22A,andTC4420/29

- Space-Saving, Thermally-Enhanced, 8-Pin DFN Package

Description

The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 12 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.