Catalog
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (3-pin package)
Beta
⌘K
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
| Part | Operating Temperature - Junction (Max) | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Current - Reverse Leakage | Technology | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Diode Pair Count | Diode Configuration | Package / Case | Package Name | Operating Temperature - Junction | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 175 °C | 1.6 V | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | 1200 V | Through Hole | 1 pair | Common Cathode | TO-247-3 | TO-247 | |||
 Rohm Semiconductor | 1.6 V | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | 1200 V | Through Hole | 1 pair | Common Cathode | TO-247-3 | TO-247N | 175 °C | |||
Rohm Semiconductor | 1.55 V | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | 650 V | Through Hole | 1 pair | Common Cathode | TO-247-3 | TO-247N | 175 °C | |||
Rohm Semiconductor | 175 °C | 1.55 V | 15 A | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | No Recovery Time | 500 mA 500 mA | 650 V | Through Hole | 1 pair | Common Cathode | TO-247-3 | TO-247 | Automotive | AEC-Q101 |