IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 3.1 MOHM;
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-220AB | -55 °C | 175 ░C | 75 A | 40 V | 16 V | 5080 pF | Through Hole | 110 nC | 230 W | 3.1 mOhm | TO-220-3 | 2.7 V | N-Channel | 4.5 V 10 V | MOSFET (Metal Oxide) |