DMTH10H032SDVW Series

100V Dual N-Channel Enhancement Mode MOSFET

Catalog

100V Dual N-Channel Enhancement Mode MOSFET

Part	Configuration	Mounting Type	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Diodes Inc DMTH10H032SDVW-7	2 N-Channel	Surface Mount	PowerDI3333-8 (SWP) (Type UXD)	1.4 W	6.2 A	35 mOhm	4 V	544 pF	8-PowerVDFN	MOSFET (Metal Oxide)	-55 °C	175 ░C	8 nC	100 V
Diodes Inc DMTH10H032SDVW-13	2 N-Channel	Surface Mount	PowerDI3333-8 (SWP) (Type UXD)	1.4 W	6.2 A	35 mOhm	4 V	544 pF	8-PowerVDFN	MOSFET (Metal Oxide)	-55 °C	175 ░C	8 nC	100 V

Catalog

100V Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Low Input Capacitance

• Fast Switching Speed

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

• An automotive-compliant part is available under separate datasheet (DMTH10H032SDVWQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.