IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 36 MOHM;
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 42 A | 20 V | 1900 pF | Through Hole | -55 °C | 175 ░C | TO-247-3 | 100 V | 36 mOhm | 110 nC | TO-247AC | 10 V | 4 V | N-Channel |
Infineon Technologies | MOSFET (Metal Oxide) | 42 A | 20 V | 1900 pF | Through Hole | -55 °C | 175 ░C | TO-247-3 | 100 V | 36 mOhm | 110 nC | TO-247AC | 10 V | 4 V | N-Channel |