DMT4031LFDF Series

40V N-Channel Enhancement Mode MOSFET

Catalog

40V N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Power Dissipation (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Diodes Inc DMT4031LFDF-7	16 V	Surface Mount	26 mOhm	4.5 V 10 V	-55 °C	150 °C	U-DFN2020-6 (Type F)	N-Channel	1.2 W	6-UDFN Exposed Pad	MOSFET (Metal Oxide)	362 pF	7 nC	40 V	2.5 V

Catalog

40V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production

• Ensures More Reliable and Robust End Application

• 0.6mm Profile—Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low On-Resistance

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities),pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.