MBRTA600 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 30V 300A 3TOWER
| Part | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Package / Case | Diode Pair Count | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Package Name | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | 30 V | Three Tower | 1 pair | Common Anode | 300 A | Three Tower | 1 mA | 700 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 40 V | Three Tower | 1 pair | Common Anode | 300 A | Three Tower | 5 mA | 600 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 60 V | Three Tower | 1 pair | Common Anode | 300 A | Three Tower | 1 mA | 750 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 60 V | Three Tower | 1 pair | Common Cathode | 300 A | Three Tower | 1 mA | 750 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 35 V | Three Tower | 1 pair | Common Anode | 300 A | Three Tower | 3 mA | 600 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 35 V | Three Tower | 1 pair | Common Cathode | 300 A | Three Tower | 3 mA | 600 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 20 V | Three Tower | 1 pair | Common Cathode | 300 A | Three Tower | 3 mA | 580 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 150 V | Three Tower | 1 pair | Common Anode | 300 A | Three Tower | 4 mA | 880 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 150 V | Three Tower | 1 pair | Common Cathode | 300 A | Three Tower | 4 mA | 880 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |
GeneSiC Semiconductor | Chassis Mount | 40 V | Three Tower | 1 pair | Common Cathode | 300 A | Three Tower | 1 mA | 700 mV | 150 °C | -55 °C | 500 ns | 200 mA | Schottky |