Catalog
Complementary power transistors
Description
AI
The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications.
Complementary power transistors
Complementary power transistors
| Part | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce | Transistor Type | Supplier Device Package | Operating Temperature | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics TIP35C | |||||||||||
STMicroelectronics TIP35C | 3 MHz | 10 hFE | NPN | TO-247-3 | 150 °C | Through Hole | 100 V | 1 mA | TO-247-3 | 25 A | 4 V |
STMicroelectronics TIP35C |