DIODE GEN PURP 50V 1A TS-1
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Qualification | Speed | Mounting Type | Current - Average Rectified (Io) | Grade | Capacitance @ Vr, F | Package / Case | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 50 V | 950 mV | 35 ns | 150 °C | -55 °C | AEC-Q101 | 200 mA 500 ns | Through Hole | 1 A | Automotive | 20 pF | T-18 Axial | 5 µA | TS-1 | Standard |
Taiwan Semiconductor Corporation | 50 V | 950 mV | 35 ns | 150 °C | -55 °C | 200 mA 500 ns | Through Hole | 1 A | 20 pF | T-18 Axial | 5 µA | TS-1 | Standard | ||
Taiwan Semiconductor Corporation | 50 V | 950 mV | 35 ns | 150 °C | -55 °C | 200 mA 500 ns | Through Hole | 1 A | 20 pF | T-18 Axial | 5 µA | TS-1 | Standard |