CY14B116 Series

Catalog

NVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54

Part	Memory Type	Memory Interface	Memory Organization	Access Time	Memory Size	Technology	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [y]
Infineon Technologies CY14B116N-ZSP25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	54-TSOP II
Infineon Technologies CY14B116N-ZSP25XIT	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	54-TSOP II
Infineon Technologies CY14B116N-BA25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	10x18 60-FBGA	60-LFBGA
Infineon Technologies CY14B116N-Z30XI	Non-Volatile	Parallel	1 M	30 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	30 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	48-TSOP I	48-TFSOP	18.4 mm	0.724 in
Infineon Technologies CY14B116N-BA25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	10x18 60-FBGA	60-LFBGA