Catalog
P-Channel Enhancement Mode MOSFET
Description
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TN1.pdf
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 25 V | -55 °C | 150 °C | 690 mW | 7.3 A | 1 V | Surface Mount | 1.8 V 4.5 V | X2-DFN2020-6 | 6-PowerXDFN | P-Channel | 2530 pF | 8 V | 28.2 nC |