DIODE GEN PURP 100V 1A SUB SMA
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Speed | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Average Rectified (Io) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 9 pF | 100 V | Surface Mount | Standard Recovery >500ns | 200 mA | 1.1 V | Sub SMA | 1 A | DO-219AB | 175 ░C | -55 C | 1.8 µs | 5 µA | Standard |