Catalog
Nch 40V 130A, TO-263AB, Power MOSFET
Description
AI
RJ1G04BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
⌘K
Nch 40V 130A, TO-263AB, Power MOSFET
Nch 40V 130A, TO-263AB, Power MOSFET
| Part | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Power Dissipation (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Package Name | Technology | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Operating Temperature | Gate Charge (Max) | Vgs(th) (Max) | Package / Case | FET Type | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 20 V | 10 V | 4.5 V | 89 W | 3.1 mOhm | 40 V | TO-263AB | MOSFET (Metal Oxide) | 3540 pF | 130 A | 40 A | 150 °C | 56 nC | 2.5 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | Surface Mount |