POWER MOSFET, N CHANNEL, 30 V, 20 A, 0.0031 OHM, SOIC, SURFACE MOUNT
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 155 °C | 2.32 V | 4.5 V 10 V | 4310 pF | Surface Mount | 8-SO | N-Channel | 4 mOhm | MOSFET (Metal Oxide) | 30 V | 2.5 W | 51 nC | 20 A | 8-SOIC | 3.9 mm | 0.154 in | 20 V |