Catalog
60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Gate Charge (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Grade | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Qualification | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Ta) | Technology | FET Type | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 12 nC | DFN2020MD-6 | 10 V | 4.5 V | Automotive | Surface Mount | 6-UDFN Exposed Pad | 435 pF | 1.65 W | 20 V | 60 V | 2.7 V | AEC-Q101 | -55 °C | 150 °C | 4 A | MOSFET (Metal Oxide) | N-Channel | 56 mOhm |