IXFN120 Series

DiscMSFT NCh HiPerFETs-Std SOT-227B(mini

Catalog

DiscMSFT NCh HiPerFETs-Std SOT-227B(mini

Part	Input Capacitance (Ciss) (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)
LITTELFUSE IXFN120N65X2	15500 pF	30 V	-55 °C	150 °C	5.5 V	SOT-227B	10 V	N-Channel	MOSFET (Metal Oxide)	890 W	225 nC	650 V	Chassis Mount	miniBLOC SOT-227-4	24 mOhm	108 A
LITTELFUSE IXFN120N20	9100 pF	20 V	-55 °C	150 °C	4 V	SOT-227B	10 V	N-Channel	MOSFET (Metal Oxide)	600 W	360 nC	200 V	Chassis Mount	miniBLOC SOT-227-4	17 mOhm	120 A
LITTELFUSE IXFN120N25						SOT-227B		N-Channel	MOSFET (Metal Oxide)			250 V	Chassis Mount	miniBLOC SOT-227-4			120 A
LITTELFUSE IXFN120N65X2	15500 pF	30 V	-55 °C	150 °C	5.5 V	SOT-227B	10 V	N-Channel	MOSFET (Metal Oxide)	890 W	225 nC	650 V	Chassis Mount	miniBLOC SOT-227-4	24 mOhm	108 A

Catalog

DiscMSFT NCh HiPerFETs-Std SOT-227B(mini

Description

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings