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150 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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150 V, P-channel Trench MOSFET
150 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Gate Charge (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Mounting Type | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | FET Type | Technology | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Rds On (Max) | Package / Case | Vgs(th) (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.7 W 16.2 W | 23 nC | 20 V | 3.2 A | 1 A | Surface Mount | 6 V | 10 V | P-Channel | MOSFET (Metal Oxide) | 887 pF | -55 °C | 150 °C | MLPAK33 | 700 mOhm | 8-PowerVDFN | 4 V | 150 V |