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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Rds On (Max) | Package Name | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | FET Type | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Vgs (Max) | Vgs(th) (Max) | Package / Case | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 8.6 mOhm | DFN2020M-6 | 1.9 W 12.5 W | 10 V | 4.5 V | -55 °C | 150 °C | 914 pF | N-Channel | 19 nC | 30 V | MOSFET (Metal Oxide) | Surface Mount | 20 V | 2.2 V | 6-UDFN Exposed Pad | 12 A |