Beta
⌘K
MOSFET N-CH 650V 2.8A TO252-3
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.4 Ohm | Surface Mount | 2.8 A | 10 V | 20 V | -55 °C | 150 °C | 262 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 28.4 W | 10 nC | PG-TO252-3 | 650 V | 4.5 V | N-Channel |