Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Technology | Vgs (Max) | Package / Case | Grade | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Rds On (Max) | Qualification | Mounting Type | FET Type | Package Name | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 2.5 V | 1.5 V | -55 °C | 175 °C | 1.6 W 320 mW | MOSFET (Metal Oxide) | 20 V | SC-59 SOT-23-3 TO-236-3 | Automotive | 315 pC | 250 mA | 30 V | 3 Ohm | AEC-Q101 | Surface Mount | N-Channel | TO-236AB | 9 pF |