MSCSM120VR1M062CT6AG-Module Series

1200V, 5 mOhm, SP6C, Vienna Rectifier mSiC™ MOSFET Module

Catalog

1200V, 5 mOhm, SP6C, Vienna Rectifier mSiC™ MOSFET Module

Part	Package / Case	Channel Count	Configuration - Features	Configuration	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Power - Max (Tc)	Operating Temperature (Max)	Operating Temperature (Min)
Microchip Technology MSCSM120VR1M062CT6AG	Module	2	Phase Leg	N Channel	1160 nC	420 A	Silicon Carbide (SiC)	1200 V	2.8 V	Chassis Mount	15100 pF	6.2 mOhm	1.753 kW	175 °C	-40 °C

Catalog

1200V, 5 mOhm, SP6C, Vienna Rectifier mSiC™ MOSFET Module

Description

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant