TK9P65W Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFETS POWER MOSFET N-CHANNEL
| Part | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) | Technology | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Package Name | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 9.3 A | 20 nC | 150 °C | 700 pF | MOSFET (Metal Oxide) | 80 W | 30 V | 560 mOhm | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | DPak | N-Channel | 650 V | 3.5 V |