BUK6Q21-30P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
BUK6Q21-30P/SOT8002/MLPAK33
| Part | Grade | Mounting Type | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Qualification | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Gate Charge (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | FET Type | Current - Continuous Drain (Id) (Tc) | Package / Case | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | Surface Mount Wettable Flank | 20 V | -55 °C | 175 °C | AEC-Q101 | MOSFET (Metal Oxide) | 30 V | 10 V | 4.5 V | 2.7 V | 34 nC | 21.5 mOhm | 1300 pF | 56 W | P-Channel | 41 A | 8-PowerVDFN | MLPAK33 |