IPI70N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CHANNEL_100+

Part	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Qualification	Vgs (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Mounting Type	Power Dissipation (Max)	Rds On (Max)	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Technology	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPI70N12S311AKSA1	-55 °C	175 °C	65 nC 65 nC	10 V	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	20 V	4 V	N-Channel	4355 pF	Through Hole	125 W	11.6 mOhm	PG-TO262-3-1	120 V	70 A	MOSFET (Metal Oxide)	Automotive
INFINEON IPI70N10S312AKSA1	-55 °C	175 °C	66 nC 66 nC	10 V	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	20 V	4 V	N-Channel	4355 pF	Through Hole	125 W	11.6 mOhm	PG-TO262-3	100 V	70 A	MOSFET (Metal Oxide)	Automotive
INFINEON IPI70N04S307AKSA1	-55 °C	175 °C	40 nC	10 V	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	20 V	4 V	N-Channel	2700 pF	Through Hole	79 W	6.5 mOhm	PG-TO262-3	40 V	80 A	MOSFET (Metal Oxide)	Automotive
INFINEON IPI70N10S3L12AKSA1	-55 °C	175 °C	80 nC 80 nC		I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	20 V	2.4 V	N-Channel	5550 pF	Through Hole	125 W	12.1 mOhm	PG-TO262-3	100 V	70 A	MOSFET (Metal Oxide)	Automotive	10 V	4.5 V
INFINEON IPI70N12S3L12AKSA1	-55 °C	175 °C	77 nC		I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	20 V	2.4 V	N-Channel	5550 pF	Through Hole	125 W	12.1 mOhm	PG-TO262-3-1	120 V	70 A	MOSFET (Metal Oxide)	Automotive	10 V	4.5 V