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12 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
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12 V, N-channel Trench MOSFET
12 V, N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Rds On (Max) | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | FET Type | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 855 pF | 16 mOhm | Surface Mount | 8 V | 11 A | -55 °C | 150 °C | 12 nC | N-Channel | 900 mV | 4.5 V | 1.8 V | DSN1010-3 | 3-XDFN | 12 V | 1.2 W 31 W | MOSFET (Metal Oxide) |