TLP291(SE Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

ISOLATORS AND SOLID STATE RELAYS FOR ENHANCED SAFETY AND EFFICIENCY | TOSHIBA, PHOTOCOUPLER (PHOTOTRANSISTOR OUTPUT), DC INPUT, 3750 VRMS, SO4

Part	Voltage - Forward (Vf) (Typ)	Voltage - Isolation	Mounting Type	Current Transfer Ratio (Max)	Current - Output / Channel	Current - DC Forward (If) (Max)	Number of Channels	Voltage - Output (Max)	Output Type	Package Width	Package Name	Package Length	Operating Temperature (Max)	Operating Temperature (Min)	Rise Time (Typ)	Fall Time (Typ)	Vce Saturation (Max)	Turn On Time (Typ)	Turn Off Time (Typ)	Current Transfer Ratio (Min)	Input Type
Toshiba Semiconductor and Storage TLP291(BL-TP,SE	1.25 V	3750 VDC	Surface Mount	600 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	200 %	DC
Toshiba Semiconductor and Storage TLP291(GB-TP,SE	1.25 V	3750 VDC	Surface Mount	600 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	100 %	DC
Toshiba Semiconductor and Storage TLP291(TP,SE	1.25 V	3750 VDC	Surface Mount	600 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	50 %	DC
Toshiba Semiconductor and Storage TLP291(GRH-TP,SE	1.25 V	3750 VDC	Surface Mount	300 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	150 %	DC
Toshiba Semiconductor and Storage TLP291(GRL-TP,SE	1.25 V	3750 VDC	Surface Mount	200 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	100 %	DC
Toshiba Semiconductor and Storage TLP291(BLL-TP,SE	1.25 V	3750 VDC	Surface Mount	400 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	200 %	DC
Toshiba Semiconductor and Storage TLP291(V4GRTP,SE	1.25 V	3750 VDC	Surface Mount	300 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	100 %	DC
Toshiba Semiconductor and Storage TLP291(YH-TP,SE	1.25 V	3750 VDC	Surface Mount	150 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	75 %	DC
Toshiba Semiconductor and Storage TLP291(Y-TP,SE	1.25 V	3750 VDC	Surface Mount	150 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	50 %	DC
Toshiba Semiconductor and Storage TLP291(V4GBTP,SE	1.25 V	3750 VDC	Surface Mount	600 %	50 mA	50 mA	1	80 V	Transistor	4.55 mm	4-SO 4-SOIC	0.179 in	110 °C	-55 °C	2 µs	3 µs	300 mV	3 µs	3 µs	100 %	DC