30 V, single P-channel Trench MOSFET
30 V, single P-channel Trench MOSFET
| Part | Package / Case | Package Name | Vgs(th) (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Gate Charge (Max) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6-UDFN Exposed Pad | DFN2020MD-6 | 2.5 V | 20 V | 4.7 A | MOSFET (Metal Oxide) | 26 nC | P-Channel | 30 V | Surface Mount | -55 °C | 150 °C | 860 pF | 50 mOhm | 1.7 W 12.5 W | 10 V | 4.5 V |