10ETF12 Series

Catalog

DIODE GEN PURP 1.2KV 10A TO263AB

Part	Voltage - DC Reverse (Vr) (Max)	Technology	Package / Case	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Current - Reverse Leakage	Mounting Type	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Package Name	Operating Temperature - Junction (Min)	Operating Temperature - Junction (Max)	Reverse Recovery Time (trr)	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-10ETF12STRRPBF	1200 V	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 ns	200 mA	100 µA	Surface Mount	1.33 V	10 A	TO-263AB (D2PAK)	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division VS-10ETF12THM3	1200 V	Standard	TO-220-2	500 ns	200 mA	100 µA	Through Hole	1.33 V	10 A	TO-220AC	-40 °C	150 °C	310 ns	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division VS-10ETF12S-M3	1200 V	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 ns	200 mA	100 µA	Surface Mount	1.33 V	10 A	TO-263AB (D2PAK)	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division VS-10ETF12-M3	1200 V	Standard	TO-220-2	500 ns	200 mA	100 µA	Through Hole	1.33 V	10 A	TO-220AC	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division 10ETF12FP	1200 V	Standard	TO-220-2 Full Pack	500 ns	200 mA	100 µA	Through Hole	1.33 V	10 A	TO-220AC Full Pack	-40 °C	150 °C	310 ns