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Complementary Pair Enhancement Mode MOSFET
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Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Configuration | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 787 pF | 18.5 nC | Surface Mount | 12 V 20 V | N and P-Channel | 1.36 W | 3.4 A 6 A | 1 V | 25 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
Diodes Inc | 787 pF | 18.5 nC | Surface Mount | 12 V 20 V | N and P-Channel | 1.36 W | 3.4 A 6 A | 1 V | 25 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |