IR4427 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR LOW-SIDE 8SOIC

Part	Gate Type	Number of Drivers	Gate Channel	Operating Temperature (Min)	Operating Temperature (Max)	Channel Type	Mounting Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Package Length	Package Name	Package Width	Input Type	Current - Peak Output (Source)	Current - Peak Output (Sink)
INFINEON IR4427STR	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Surface Mount	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427PBF	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Through Hole	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Through Hole	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427STRPBF	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Surface Mount	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427PBF	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Through Hole	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.3 in	8-DIP 8-PDIP	7.62 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427S	IGBT MOSFET N-Channel MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Surface Mount	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	2.3 A	3.3 A
INFINEON IR4427SPBF	IGBT MOSFET	2	N-Channel	-40 °C	150 °C	Independent	Surface Mount	0.8 V	2.7 V	20 V	6 V	Low-Side	10 ns	15 ns	0.154 in	8-SOIC	3.9 mm	Non-Inverting	2.3 A	3.3 A